Thermal annealing results to the shift of the point of electrical continuity up to 10 nm.
As it is apparent from Figure 1, thermal annealing leads to the shift of the point of electrical continuity.
The Pt becomes electrically continuous in the thickness above 5 nm, while in the PLLA/Pt heated at 60°C, the point of electrical continuity has shifted to the Pt thickness of 10 nm.
Activation time is the time measured from the point of electrical stimulus to the maximal amplitude of the action potential.
Local activation time is the time measured from the point of electrical stimulus to the maximal amplitude of the AP repolarization time is obtained by the addition of local activation times to MAP duration; however, in the present study we only observed insignificant changes in local activation time in the presence of reduced [K+]o (data not shown).
In addition, an adiabatic assumption can lead to about 4 percentage points overestimation of electrical efficiency and reduces the high power operating range by about 10%.
This depletion width provides a direct experimental evidence for the device design criteria that a-Si H sola-Si Hlsolaruld be thinner than ∼500 nm, in the point view of elecellsal potential.
0le {P}_{G, CHP}(t)le {P}_{G, CHP}left(beta right)times Mleft( CHP,tright) (26 where α, β, θ, and λ are the four marginal points of the electrical-thermal characteristic of combined heat and power.
However, from a more general point of view, electrical path length changes at other sites that might be involved in the future in INT sessions might show characteristics that require such external data in order to process the observations in an unbiased way.
An electrical engineer will come in and say, 'Oh, here's the answer for you.' They have not thought of themselves as being neuroscientists but now they can approach the problem from the point of view of electrical engineering".
