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Pit initiation fits the point defect model for passivity breakdown.
The kinetics of point defect migration is characterized.
The diffusivity was calculated based on the point defect model.
The mass transport coefficient of the point defect through oxide is determined through the Point Defect Model.
It is more likely that the irradiation process can activate a point defect movement, giving rise to a close pair recombination by point defect migration.
The transport property of a point defect in the passive film was characterized by the diffusivity of the point defect (D0) and the steady-state current density (iss).
While their thermal conductivities were significantly depressed by enhanced point defect scattering.
Intrinsic point defect plays a core role in improving thermoelectric performance of V2VI3 polycrystalline materials.
This is very important when a point defect engineering wants to be achieved.
So, point defect micro-cavities are used to further filter the original light wave.
The point defect density of oxidized film was calculated by Mott Schottky plots.
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