Therefore, normalized reflectance defined as R norm ≡ Reflected power density Incident power density (8) Figure 4 Plots of the reflectance spectrum for the (a) cylinder- (b) circular-cone-, (c) and square-pyramid-shaped Si 3 N 4 SWS with incident angles of 0°, 15°, 30°, 45°, and 60°.
Figure 1c shows the contour plot of the calculated average reflectance of the antireflective nanostructures as functions of the period and height.
Figure 2 Plot of the difference of reflectance spectrum of Si 3 N 4 SWS with the cylinder-, the right circular cone-, and the square pyramid-shaped structures as well as two different periodical configurations: 1 × 1 (solid line) and 2 × 2 arrays (dashed line) in the 3D FEM simulation.
Figure 6b shows the contour plot of the incident-angle-dependent reflectance for the Si nanostructures fabricated using the optimum Si MaCE condition of (i), as a function of the angle of incidence (AOI) and wavelength.
Under optimal conditions, the glyphosate calibration graphs obtained by plotting the optical density of the reflectance signal (AR) against the concentration were linear in the range 50 500 μg mL−1, with a correlation coefficient of 0.9987.
n Summary plot of average reflectance with respect to the deposition amount.
The sensor shows high sensitivity that can be observed from the dynamic response of the reflectance plotted.
j Plot of average reflectance.
l Summary plot of average reflectance.
e Summary plot of average reflectance.
