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The plasma was ignited by the high voltage pulse itself.
In June 2002, the first plasma was ignited at 18 GHz.
The plasma was ignited by the application of radiofrequency power (13.56 MHz, 150 W) to the lowermost sample holder, earthening the top electrode.
Finally, nitrogen plasma was ignited and AlN nanowall structures were grown on the Si substrates at 700 °C.
After inserting the sample and a small temperature stabilization step at 10°C, the plasma was ignited at a pressure of 5 mTorr.
The plasma was ignited between two parallel stainless steel electrodes with the interelectrode distance of 10 mm by a radiofrequency power supply at 13.56 MHz and 20 W. The plasma pretreatment was conducted for 90 s.
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A pulsed hexamethyldisiloxane:oxygen plasma is ignited under various conditions and the oxygen permeation is investigated.
The dissociation rate is determined by following the lowering of the molecular nitrogen signal when the plasma is ignited.
The dissociation fraction of the molecular nitrogen in atomic nitrogen is determined by following the decrease of the molecular nitrogen signal when the plasma is ignited.
The plasma is ignited with the help of inductively coupled RF power of 13.56 MHz, and the density is then increased by absorption of 2.45 GHz of microwave power.
After that, the Sn droplets are heated to 400 °C and a H2 and SiH4 plasma is ignited.
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