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The MoS2 channel was patterned using electron beam lithography and oxygen plasma etching.
For several years, we have been manufacturing AGPMs by etching gratings into synthetic diamond substrates using inductively coupled plasma etching.
MWCNTs were exfoliated to form MWCNTO-GO by oxygen plasma etching.
plasma etching.
In addition, the effect of plasma etching times on fiber densities was evaluated.
b PS size reduced by oxygen plasma etching.
(d) Removal of unprotected graphene by oxygen plasma etching.
The total pattern height measured by AFM was ∼ 350 nm after the two-step plasma etching.
PMMA A4 was used as the etching mask during oxygen plasma etching.
The photoresist-defined silicon wafers were then anisotropically etched to a desired depth in a multiplex inductively coupled plasma etching system (Surface Technology Systems, Newport, NJ, USA).
Briefly, the channels were obtained by plasma etching of silicon after photolithography.
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