Sentence examples for plane of reflection from inspiring English sources

The order of rotation and axis or plane of reflection should be chosen to relate to the anatomical features and the biological question under investigation.

Likewise, reflections are defined in relation to a particular axis or plane of reflection; shape changes that are symmetric under reflection about a different axis or plane will therefore not be considered as symmetric under reflection for the purposes of the Procrustes ANOVA.

The difference between boundaries and midlines of the sectors is important if the order of the rotation is even: in this case, the plane of reflection symmetry is assumed to pass through two boundaries between sectors (e.g. the vertical axis in Figure 4).

DOI: http://dx.doi.org/10.7554/eLife.05421.020 As described in Kahn et al. (1982), the beam I0 incident on the sample crystal can be described in terms of two components, one parallel and the other perpendicular to the plane of reflection: (29) I 0 = I σ + I π.

The full widths at half maximum (FWHM) values measured for (111) planes of reflection were used with the Debye Scherrer equation to calculate the size of the nanoparticles: Open image in new window Fig. 5 XRD patterns of CdS nanoparticles D = K λ / β cos θ.

Some organisms, such as the green alga Micrasterias have two perpendicular axes (or planes) of reflection symmetry (also called biradial symmetry or disymmetry).

As for the case of bilateral symmetry, the axes or planes of reflection symmetry pass through the configuration of landmarks and the centre or one or more axes of rotation are situated inside the configuration.

The full width at half maximum (FWHM) values measured for 1 2 3, 2 0 4, 0 4 3, 1 4 4, and 3 1 1 planes of reflection was used with the Debye-Scherrer equation to calculate the size of the nanoparticles.

Moreover, the 2θ peaks observed at 2θ = 26.48°, 28.15°, 28.28°, and 43.87° exhibit the formation of the orthorhombic phase of CdS (PDF# 47-1179) whicorrespondond to the (033), (042), (240), and (107) lattice planes of reflections, respectively.

This property of surfactant added TMAH is used to fabricate 45° micromirrors which are used in optical MEMS to provide 90° out-of-plane reflection as illustrated in Fig. 15 [150–152].

Returning to the meridional reflections, our analysis mandates the forbidden first-order, out-of-plane reflection to be at q z = 0.17 Å–1, corresponding to a characteristic d-spacing of 36.4 Å, which is much larger than the out-of-plane d-spacing of BT-ID, BT-T-ID, and BT-T3-ID, or those of any other isoindigo-containing molecular or polymeric semiconductor reported previously.