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The different phases of the anodization process are as follows [21]: At the very beginning of the anodization the current drops spontaneously to a lower value due to initiation of the oxidation of the Al surface.
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The third stage of the anodization process is initiated, applying a stepwise current-limited re-anodization procedure under a galvanostatic regime in the same electrolyte.
The details of the anodization process are described elsewhere [27].
It is interesting that the decreased current in the early stages of the anodization process recovers to steady state much faster in the second anodization.
Figure 1 Current density vs. time curve of the anodization process.
In order to further study the behavior of the anodization process, the real-time time-current curves were recorded.
In the second step of the anodization process, prior to the anodization at 180 V, a pretreatment at 120 V for 10 min was adopted to maintain a flat anodic TiO2 film surface.
The thickness of the AAO film anodized in oxalic acid increased first and then decreased with the progress of the anodization process.
In Fig. 4a) we show the nanoporous titanium oxide formed onto the film substrate in the first stages of the anodization process.
The fabrication process utilizes a photoresist mask; but to overcome the instability of the photoresist during the anodization process, special borderlines are included in the mask design.
Anodization begins when a constant current is applied between the c-Si wafer and the electrolyte by means of an electronic circuit controlling the anodization process.
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