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As the Mo-content increases, the AB7 phase disappears while the AB4 phase grows in size and abundance.
As the silicon phase grows larger, volume expansion effects become more significant and lead to capacity fading as seen in other Si and SiO2 anodeSiO253.
The rutile phase grows in a modified sputtering method in contrast with anatase phase growth in conventional sputtering apparatus.
Furthermore, this study also provides direct evidence to show that the CIS phase grows at the expense of an intermediate Cu11In9 phase.
It is shown, for the solid phase crystallization of an amorphous silicon thin film, that the integral intensity of Raman spectra corresponding to the crystalline phase grows linearly in the time-logarithmic scale.
Although the results of calculations based on the phase selection theory indicate the achievement of congruent growth, they also suggest that the Nd123 phase grows preferentially over the Nd4Ba2Cu2O10 phase (Nd422) even above TP.
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Yim, C. et al. Heterojunction hybrid devices from vapor phase grown MoS2.
After 1000 °C annealing, (Co, Ti -rich phase disappeared, while (Ni, Ti -rich phase andisappearedrich phase grewhile
We show that the initial curvature and anisotropy, though diluted during the ekpyrotic phase, grow back exponentially during the bouncing phase.
The γ-prime phase grew in a unique crystallographic orientation relationship with the γ-Ni based solution matrix.
The decagonal phase grew in clusters with an orientation relationship between the grains suggesting nucleation on an icosahedral seed.
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