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In order to investigate the high resolution capability of nitrocellulose resist, periodic line array with a period of 600 nm was exposed at 20 keV over a broad line dose range and subsequently coated with 30 nm Cr for SEM imaging.
As chemically amplified resists, SU-8 and mr-L 6000 offer superior sensitivity, but with low contrast and resolution (more strictly speaking, half-pitch for dense periodic line array patterns), which is limited by the diffusion of the photoacid generator during postbaking.
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In this experimental study, periodic line-like structures with different periodicities (5, 10, 19, and 300 μm) and structural depths (approximately 1 and 4 μm) were fabricated on stainless steel samples (AISI-304) by short-pulse laser interference and ultrashort-pulse laser patterning.
In this work, periodic line-like and quasi-periodic Penrose-like patterns were produced on polyimide samples by direct laser inference patterning.
To fabricate nanoscaled periodic lines, GSBT film of 80 nm, GST film of 80 nm, and Ti film of 40 nm were deposited on GaAs substrates.
Periodic lines, approximately 15-μm-wide and separated by several hundred micrometers, were prepared on the surface of Zr55Cu30Al10Ni5 metallic glass by scanning a focused laser beam across the samples in air.
This hexagonal phase allows the self-alignment of the silver nanoparticles, with the formation of periodic arrangement, the separation of the silver nanoparticles between them is about 5 nm, and the separation distance between parallel and periodic lines is 70 nm.
Even for chemically homogeneous and topographically flat substrates and constant coating speeds, the layer can exhibit quasi-periodic line patterns extending parallel to the contact line of the liquid meniscus.
AFM section measurement is performed on the periodic linker lines marked with a white dashed line in Figure 7 C and a series of white arrows in Figure 7 D. The results in Figure 7 E reveal that the linker lines exhibit a repeat spacing of 18.8 nm.
We use azimuthally resolved spectroscopic Mueller matrix ellipsometry to study a periodic silicon line structure with and without artificially-generated line width roughness (LWR).
In the nanometer range they are sensitive to deviations from the ideal periodic straight line structure such as LER.
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