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Low-dose CT was performed using a voltage of 130 kV with a tube current of 2.5 mA (20 mAs).
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Measurements using H3O+ ionization were performed using a drift voltage of 600 V, drift temperature of 60 °C and a drift pressure of 2.25 mbar resulting in an E/N of about 130 Td (1 Td = 10 17 cm V 1).
The deposition of Co was performed using a constant voltage of −1 V at room temperature and electric current was monitored as a function of time.
ESI was performed using a needle voltage of 3.5 kV.
Elution occurred at a flow rate of 250 nl/min and ionization was performed using an applied voltage of 2.4 kV to the emitter.
Activation of Panx1 channels by voltage was performed using a ramp protocol with voltages from the holding potential of −60 mV to +100 mV.
Voltage clamping to zero was performed using a cyclical 30 s voltage clamp to 0 mV followed by three seconds open circuit period using the Pro-4 timer.
Transmission electron micrographs (TEM) were performed using a JEM-2100F instrument operated at an accelerating voltage of 200 kV.
Transmission electron microscopy (TEM) is performed using a Hitachi H-7100 microperatedperated athehe voltage of 100 kV.
The SEM experiments were performed using a Zeiss electron microscope with the working voltage of 15 kV and the working distance 10.5 mm.
High-resolution microscopy measurements were performed using a JEM-2010HR transmission electron microscope (TEM) with operating voltage of 120 kV.
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