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A dot-patterned photomask was used for PR, the patterning process via UV light exposure.
Only when the patterning process was optimized, high-quality hole-patterned masks of different dimensions and geometry were obtained.
A crucial aspect is the film patterning process [16].
Therefore, a buffer layer growth is required to remove the defects produced by the patterning process.
This paper presents a bottom-up nano-filter patterning process based on DNA self-assembly.
It was assumed that this shrinking effect was related to the FIB patterning process.
However, the use of a patterning process without an additional photolithographic step can reduce manufacturing cost.
Figure 1 showed the scheme of ZnO patterning process on a silicon surface.
Similar ridges were observed in Refs. 15 and 29 after the FIB patterning process.
This finding implies that no electrical degradation was induced by the patterning process.
We explored the influence of the patterning process using plasma on the graphene transparent electrodes.
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