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The results show that the amorphous carbon is successfully coated on the surface of Li4Ti5O12 nanoparticles with partial doping of Mo6+ into the Li4Ti5O12 structure.
The mixing of SWCNT with PEDOT/PSS caused a partial doping of SWCNT which was indicated by the change of relative intensity of the SWCNT Raman features.
Finally, it is found that, by partial doping of Cu to the vacant site of half-metallic half-Heusler alloys, the magnetic moments of these can be tuned without destroying the half-metallicity.
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The distortion may arise and change with temperature, oxygen partial pressure, doping with other ions, electrical field or surface stress.
PPy with partial PO43− doping was also employed to improve cycling stability and C-rate performance of S@PPy composite by exchanging Cl− with PO43−.
It has previously been observed for VB2-seeded YB22C2N that Seebeck coefficients can increase when partial intrinsic doping assumedly occurred from heat treatment [45, 46, 47].
The excellent electrochemical properties should be attributed to the improvement of electrochemical kinetics by the synergistic employment of reducing particle size, partial Mo6+ doping and Li2MoO4/C modification.
To improve the water storage capability, electrochemical activity and coking resistance of the Ni+BaZr0.4Ce0.4Y0.2O3-δ (BZCY4) material, the reduction of Zr amount and partial Yb doping on Y site are investigated in this study for its application as anode materials for solid oxide fuel cells (SOFCs) operating on ethanol fuel.
A novel triple reduced surface field (RESURF) lateral double-diffused metal oxide semiconductor field effect transistor (LDMOS) with partial linear variable doping (LVD) N-type top (N-top) layer is proposed in this paper.
In the case of heavy Sn doping, partial Sn4+ ion is readily reduced to Sn2+ for the reason that free electrons are bound around the SnIn , and the concentration of oxygen vacancy decreases [20].
Several ways are examined to provide an electrical conductivity of diamond in order to supply electrons for the emission: diamond boron doping, partial graphitization/amorphization by nitrogen ion implantation and/or high temperature annealing, formation of built-in conductive metal layers.
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