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Transformer based matching networks have been studied for PA design and new modeling methods proposed in this work.
These transformer-based passives ensure an ultra-compact (2.1 mm2) and broadband (24.9% for −1 dB Pout bandwidth) PA design.
The chapter deals with two recently proposed characterization techniques of microwave transistors oriented to high-frequency power amplifier (PA) design.
However, the low-supply voltage of nanoscale CMOS technology, the loss of on-chip passives and the conductive silicon substrate make a fully-integrated PA design challenging.
Then, different PA design approaches are discussed from a system perspective (ie, highlighting the linearity vs. efficiency tradeoffs) and discussing some different approaches for communication systems.
For the proposed PA design a Rogers printed circuit board (PCB) on a Cu hot plate for better thermal transferring has been used.
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Finally, broadband and multiband PA designs will be also discussed for emerging wireless communications.
The ET-PA example uses a pseudo-differential PA designed with two integrated SiGe power cells fabricated in a 0.35-μm SiGe BiCMOS technology with through-silicon-via.
Since only odd terms provide distortions in the RF transmit band, P=7 is typically sufficient for linear PA designs which are close to the simplified amplifier model, which can include class AB amplifiers.
The increased accuracy of the general Neuro-SM model helps to improve the accuracy of circuit and system simulation, such as simulation to predict power performance and linearity of high-frequency PA designs.
CSB and PA designed the study.
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