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Buffered oxide etching.
Finally, the silicon nanotips were oxidized in the furnace, and the surface silicon oxide was then removed by wet etching using a buffered oxide etching [BOE] solution to form the P-SiNT array in Figure 1. Figure 1a shows the SEM image of the arrays of P-SiNT emitters.
The wet-chemical digital etching was carried out by repetitive HNO3 oxidation and oxide etching.
The 28-nm samples were prepared with cycles of thermal oxidation and buffered oxide etching from the 220-nm commercial SOI wafers (Soitec, Peabody, MA, USA).
Oxide layer is usually patterned by photolithography followed by oxide etching in HF/BHF.
The chemical solution treatment process included a dilute HF solution (DHF), ozone (O3) water, and buffer oxide etching solution (BOE).
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Figure 7 shows the fabrication results of the ion trap fabricated by this oxide timed etching method described in the above.
After wafer cleaning, 100 nm thick SiO2 layer is grown on the wafers using thermal oxidation method at 1000 °C and the 250 × 250 μm region is opened using lithography and 30:1 BOE (buffered oxide etchant) etching.
Wells containing organized arrays of square holes of different depths separated by gaps of 25 μm were produced on the surface of the titanium oxide by etching for 30, 60, 90, and 120 min.
These include preparations for mechanical retention by grinding with burs, air abrasion with aluminum oxide, and/or etching with either acidic solutions or electrolysis [ 31– 31].
The thin layers of Si3N4 and SiO2, are used as etching masks, and patterned by reactive etching and buffered oxide etch (BOE), respectively.
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