Sentence examples for oxide breakdown from inspiring English sources

Considering no oxide breakdown occurs, planar mesa termination structure can realize higher breakdown voltage of 1751 V.

The oxide breakdown time (OBT) was found to decrease with increasing temperature for all concentrations investigated.

If the stress level is high or the stress persists, oxide breakdown will occur, and in some severe cases, oxide melt will be observed.

A two-step oxide breakdown (BK-1 and BK-2) is being recorded in the J-E plot for all investigated samples (inset of Figure 4).

Breakdown performance of field plate termination structure is limited at 1480 V due to peak electric field at the corner of Schottky contact (no oxide breakdown occurs).

The maximum oxide electric field under the It2 stress level is around 0.75 V/nm, and since gate oxide breakdown field is 1 V/nm [13], oxide breakdown is unlikely to be the dominant degradation mechanism for GAA SiNW FETs under ESD.

Analytical equation of output power including impact of gate-oxide breakdown is developed and compared with RF simulation results.

We present a simulation approach to assess the reliability of an RF CMOS circuit under user conditions, based on existing DC degradation models for gate-oxide breakdown and hot-carrier degradation.

Before the oxide film breakdown, specimens moved increasingly in a compressive direction with increasing chloride ion concentration.

Passive oxide film breakdown is a necessary step in pitting corrosion, and appears to occur in these steels at a critical film thickness of ≈3 nm.

The movement in the compressive stress direction due to chloride ion incorporation before the oxide film breakdown increased with decreasing applied current density.