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Zhang et al. observed that the mean size of GO sheets descends with longer oxidation time and more oxidants [44].
As the oxidation time increased, the oxide thickness continued to increase until it reached the saturation point at about 5 min.
In the oxidation process, it is found that oxidation time, volume of oxidants, and oxidation path will also affect the GO particle size [41, 43 45].
a Silicon oxide thickness with respect to oxidation time, measured by ellipsometer, with an extended line at 1.8 nm.
Variation in the total oxide intensity (Iox) for all the six temperatures over oxidation time up to 60 min is shown in Figure 3.
Oxidation time has a significant effect on the tribological behavior of thermally oxidized CP-Zr under dry sliding conditions.
The oxidation time was 90 min.
Ti4+ peak increased with increasing thermal oxidation time.
Further, it decreased gradually as oxidation time increased.
Oxidation time was varied between 10 min and 3 h.
Figure 1 Oxidation time evolution of 30-nm Ge QDs.
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