The bonding strength and the thermal shock tests revealed that the adhesion strength between the inner layer and the outer layer was significantly increased owing to the zigzagged interface.
Traditionally, the fabrication of metal oxide used to be carried out on the glass or ceramic substrate, but this trend has been successfully replaced by the polymeric matrix owing to the outstanding adhesion at the interface [7] and cost effectiveness of the process [8].
Due to the embedment of FSS films, the thermal-elastic stability of the structure was slightly enhanced while the flexural and impact resistance performances decreased owing to the effect of weak interface between the FSS films and composite laminates.
Simulations based on standard numerical implementation of these schemes suffer from an artificial increase in the width of the interface function owing to the numerical dissipation introduced by an upwind discretization of the governing equations.
The significant improvement of oxyacetylene ablation resistance is attributed to a lower surface temperature during ablation, a lower thermal stress in the coating, and a better bonding strength of the coating/substrate interface owing to the introduction of SiCnw/PyC core-shell structures.
The UVO exposure facilitated, (i) catalytic conversion of PS into the lower molecular weight PS/PSO; (ii) heating beyond the glass transition temperature of PS/PSO because the UV rays concentrated at the GO-PS interface owing to the translucency (opacity) of the PS droplets (GO flakes); (iii) rapid spreading, thermal expansion, and breaking of PS/PSO droplets to form GOPSO nanocomposites.
We can configure different estimation software according to different excitation signals at different frequencies to extract the channel properties owing to the wideband radio frequency (RF) interface.
This also prevents oxidation of the W TE at the TaO x /W interface owing to the migration of oxygen from the underlying films toward the Ti film, which contributes to the improved resistive switching memory performance as described below.
A thin layer of TiO x N y with a thickness of 3 nm is formed at the TaO x /TiN interface, owing to the oxygen accumulation nature of Ti.
The reason may be that there is a high potential barrier at the heterojunction interface owing to the existence of the big built-in potential VD, and the photogenerated carriers cannot be easily transported to the other side of heterojunction and then be collected for PEC water splitting.
