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(d) Output characteristic of the hybrid CNT/IGZO NOR gate.
(f) Output characteristic of the hybrid NAND gate.
(b) Output characteristic of the hybrid CNT/IGZO NAND gate.
(b) Output characteristic of a 51-stage ring oscillator.
(c,d) Optical micrograph of a 101-stage ring oscillator and its output characteristic, respectively.
(h) Output characteristic of the CNT TFT with VDS varied from −5 to 0 V.
(d) Output characteristic of 20 hybrid CNT/IGZO inverters fabricated on a PI flexible substrate.
(j) Output characteristic of the IGZO TFT with VDS varied from 0 to 5 V.
A dynamic NOR gate and its output characteristic are exemplified in Fig. 7g i.
(e,f) Optical micrograph of a 251-stage ring oscillator and its output characteristic, respectively.
(g,h) Optical micrograph of a 501-stage ring oscillator and its output characteristic, respectively.
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