Sentence examples for optimized power conversion from inspiring English sources

Therefore, an optimized power conversion efficiency of 4.13% is demonstrated, indicating ∼63% and ∼34% enhancement compared with Pt and pure MoS2 counter electrodes.

By regulating the ratio of D205 PC70BM as 1 4 in CB, an optimized power conversion efficiency PCE) of 3.0% was reached after device annealing at 90 °C for 1 min under standard AM 1.5100 mW/cm2 sunlight.

The optimized power conversion efficiency of LP-2 reaches 6.04% with an open-circuit voltage of 730 mV, a short-circuit current density of 11.67 mA cm−2, and a fill factor of 0.71.

The photovoltaic properties were investigated under various conditions, the optimized power conversion efficiency (PCE) of 4.33% with an open-circuit voltage (Voc) of as high as 1.09 V were obtained, which resulted in a 32% improvement in comparison with PBDTTPD/PC71BM-based device under the same conditions.

The organic solar cells (OSCs) based on BTTR PC71BM (1:0.8, w/w) blend with tetrahydrofuran (THF) solvent vapor annealing (SVA) exhibited an optimized power conversion efficiency (PCE) of 8.0% with an open circuit voltage (Voc) of 0.93 V, a short circuit current density (Jsc) of 13.2 mA cm−2, and a fill factor (FF) of 65.4% under the illumination of AM 1.5G, 100 mW cm−2.

It presents that the optimized power conversion efficiency of the AZO-based IOSCs is improved by approximately 58.7% compared with that of un-doped ZnO-based IOSCs.

The resulting solar cell, not yet optimized, achieved power conversion efficiency only 14%% less than the conventionally processed c-Si control cell, but its manufacturing cost has been significantly reduced.

Under optimized doping conditions, power conversion efficiencies increase almost universally by a factor of 2.5.

Furthermore, the flexible organic solar cell fabricated on the roll-to-roll sputter-grown flexible ITO electrode at an optimized condition exhibited a power conversion efficiency of 1.88%.

The electron and hole extractions are markedly enhanced by setting intermediate energy levels, and the optimized PSC achieves a power conversion efficiency of 7.93% in comparison with 6.05% for the device free of CQDs and PQDs.

The doping concentration of B in the p-type Si QD layer was optimized at 5.71×1021 andms/cm3, and high power conversion efficiency (PCE) of 14.15% was achieved at the optimized B concentration.