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The optimized growth temperature for growth of uniform ZnO/Al2O3 multilayer should be optimized within the overlap region of the two ALD windows.
Optimized growth conditions for DWNT formation are presented.
Optimized growth conditions are found for both structures.
The optimized growth condition for the various SZO NWs is accomplished by self-designed HW-PLD.
The optimized growth temperature is found to be 70°C, as shown in (b).
High quality ZnSe crystal can be achieved under the theoretically optimized growth conditions.
This may help to form atomically sharp axial heterointerfaces in optimized growth recipes.
The results showed that white net green-house cover optimized growth and yield of cucumber plant.
Furthermore, multilayer graphene with Bernal stacking order and non-Bernal stacking order was also synthesized under optimized growth conditions.
Based on the optimized growth parameters, a 10-layer InGaN/GaN QD yellow-green LED is successfully grown by MOVPE.
As a consequence, the optimized growth temperature for deposition of ZnO/Al2O3 composite films was selected at 150°C.
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