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The optimized device design is implemented and electrically tested.
Though tDCS is well tolerated, it is desirable to further limit the voltage applied for additional safety factors and optimized device design.
In this work we propose a physics-based analytical model of nanowire tunnel FETs, which is meant to provide a fast tool for an optimized device design.
From the device simulation, the optimized device design parameters, such as the IGZO film thickness and the edge length, have been discussed to reduce the hump occurrence under negative bias stress and illumination.
This paper demonstrates that while some improvements are observed, the length scaling does not dramatically affect switch figures of merit such as subthreshold slope, Ion and Ioff down to about 20 nm, and an optimized device design can be extended over a much larger window of sub-micron dimensions, compared to the MOSFET.
We note that from the results in our earlier work [20], the addition of a top gate tends to decrease E a, but as the top-gated geometry provides very good heat sinking, and top gates will ultimately be needed for optimized device design, we see this as the best route for development of a graphene nanoribbon device that retains its gapped behavior at high bias.
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Numerical simulations are conducted to study the current-matching effect and operation mechanisms in and to design the optimized device structure of InGaN/Si tandem cells.
In this study, numerical simulations are conducted to determine the current matching-effect and operation mechanisms in and to design the optimized device structure in InGaN/Si tandem cells.
Our investigations of this device design show an optimized CdS film thickness of 70 nm and an optimized PbS QD diameter of ∼2.7 nm, corresponding to a bandgap energy of ∼1.57 eV.
The device design has been optimized for use with GAMMASPHERE.
The device design has been optimized for use with a 4π γ-ray array, and the main applications are transfer reactions and Coulomb excitation.
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