Top contact Copper (II) Phthalocyanine (CuPc) based on Organic Field Effect Transistor (OFET) using various dielectrics were fabricated.
In the fields of solid state lighting, integrated circuits based on organic field-effect transistors (OFETs 7,8,9,10,11 and organic photovoltaic cells (OPVCs 12,13,14,15,16, commercial breakthrough is still ahead, with considerable effort in fundamental as well as applied research currently undertaken.
The design of high-speed optical memory elements based on organic field-effect transistors comprising [60]fullerene as an n-type semiconductor and 1,3-dihydro-1,3,3-trimethylspiro(2H-indole-2,3'-[3H]naphth[2,1-b][1,4]oxazine) as a light-sensitive component placed at the interface with an aluminum oxide gate dielectric has been developed.
Research on organic field-effect transistors over the past 25 years has contributed greatly to the scientific understanding of the fundamental charge transport physics of conjugated polymer and small-molecule organic semiconductors.
Threshold voltage and turn-on voltage of organic field effect transistors are very sensitive to the fabrication process.
We show that the dielectric solvent exerts a direct influence on performance of organic field-effect transistors (OFETs), but the difficulty rests in finding solvents whose orthogonality does not attack the semiconducting layer in a device of top-gate architecture.
Noh, Y. et al. Effect of light irradiation on the characteristics of organic field-effect transistors.
In an attempt to disentangle the effects of permittivity and surface energy of the gate insulator (expressed by its dielectric constant k and water contact angle, respectively) on the performance of organic field-effect transistors (FETs), we fabricated top- and bottom-gate FET architectures with poly 3-alkylthiophenes) (poly 3-alkylthiophenesde-chain lengths, using a range of gate dielectrics.
