In a continuous effort to increase the DC and RF figure-of-merits (FOMs), multigate MOSFETs have evolved from classical planar device into a gate all around structure.

4

Superlattices and Microstructures

To find an optimized Ge-profile for RF-applications other figure-of-merits, such as maximum cut-off frequency and minimum noise figure were also simulated.

5

Solid-State Electronics

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