The guiding principles for obtaining device-grade hydrogenated amorphous silicon (a-Si H) films with high deposition ra-Si H large-area substrates by catalytic chemical vapor deposition (Cat-CVD) are presented.
The cross-sectional SEM image of the obtained device is given in Fig. 3b, which clearly exhibits a multilayered structure.
The concentrated and steady plasma could be obtained device with higher gas pressure and relative lower microwave input power.
Based on the study, we have obtained device exhibit drive-current of 900/485 μA/μm for NMOSFET and PMOSFET, respectively, at standard supply voltage of 1 V.
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Desplobain et al. [12] have obtained devices with 320 μF cm−2 capacitance by using gold-coated porous silicon but in aqueous electrolyte.
In order to evaluate so obtained devices, an extended characterization has been carried out including DC magnetic measurements and noise analysis.
