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The main numerical aspects of the model are described, addressing in particular the contact creation and update procedures, and the numerical devices that support an efficient explicit solution algorithm.
The finite element calculation is performed at macroscopic level and trained neural networks are employed as numerical devices for substituting the finite element computation needed for the mesoscale prediction.
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The models are verified by comparison with numerical device simulations.
Numerical device modeling is used to study p-channel FETs with InSb, GaSb and InGaSb channels.
Proposed model is verified with professional numerical device simulator and excellent agreement is found.
The design has been optimized using a two-dimensional numerical device simulation program (TCAD-Silvaco).
The cell concept is validated by means of numerical device simulations.
However, the heavily degenerate doping concentrations used in these devices present new challenges to numerical device simulation.
Its results in comparison with numerical device simulations and measurements show good agreement down to dimensions of 0.1 μm.
The proposed model results have been validated against the data obtained from a commercially available numerical device simulator.
Therefore, we investigated the device behaviour by means of numerical device simulation concerning the formation of current filamentation and the correlated shape of the electrical field distribution.
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