Sentence examples for number fluctuations from inspiring English sources

The typical physical phenomena are presented, including phase separation, clustering, and giant number fluctuations.

The 1/f noise, which can be interpreted in terms of carrier number fluctuations, is found to be about one decade lower for buried-mode devices.

Low frequency noise measurements show that the carrier number fluctuations dominate the flicker noise in weak inversion even at 10 K operation.

We find that while both pathways implement the same negative feedback mechanism, the protein number fluctuations in the dimeric pathway are drastically reduced compared to the monomeric pathway.

Further investigation of normalized noise spectral density's dependence on gate overdrive voltage confirmed the dominance of carrier number fluctuations in the channel.

We find that the 1/f noise can be interpreted in terms of carrier number fluctuations for both N and P channel MOSFETs for surface and buried mode of operation.

The 1/f noise is attributable to the charge number fluctuation correlating with the mobility fluctuation.

A carrier number fluctuation dominant flicker noise has been observed for all devices.

In contrast to the dominance of mobility fluctuation noise mechanism in monolayer MoS2 FET [73], the dominance of noise mechanism in as-fabricated multilayer MoS2 FET is demonstrated to be the carrier number fluctuation.

The low frequency noise analysis clearly shows that from 300 K to 10 K, the carriers number fluctuation dominates the flicker noise in the channel in weak inversion, while the access resistances noise contribution prevails in strong inversion.

The grand canonical ensemble techniques both Monte Carlo and molecular dynamics—have become very popular in recent years, but no direct link between the number fluctuation results from these simulation methods and a Kirkwood Buff theory has been established.