Sentence examples for nmd profile from inspiring English sources

We predicted NMD profile changes in PD leukocytes compared to healthy volunteers and in post-DBS compared to pre-DBS preparations, and surmised that disconnecting the electrical stimulus would again alter the NMD profile.

Here, we provide evidence for NMD profile changes that are compatible with a regulatory role of NMD in both PD and under DBS ON Stimulation as well as following an hour stimulation cessation (i.e. OFF stimulation).

Indirubin, with an absorption maximum of about 550 nm, has a more purple hue than indigotin, which has a maximum at about 610 nm. Figure 3 Reversed phase HPLC profile of extract of the green yarn in specimen 10141 monitored at 350 nm (profile A) and at 600 nm (profile B); the y-axis units are mAU, the x-axis, minutes.

Such metamorphoses were characterized by transformation of individual cluster ensembles into a single particle with a characteristic size of about 60 nm (profile h).

Figure 1d h indicates topographies and nanostructures of activated T lymphocytes, and the lamellipodia-like protrusion that is found to have a height of about 310 nm (profile 1k) is shown by white dotted line in Fig. 1d and the black arrow in Fig. 1e. Figure 1g is an enlarged view (error-signal mode) of the square frame in Fig. 1f, and cellular pseudopodia are shown by black arrows.

Scale bar: 20 nm; right: electron density along the 8 nm profile indicated with two dashes (bottom).

Arrows: <80 <span class="lh lhl">nm profiles.

An increase in molar Si/Mg in the outer 30 nm may be just resolvable but this requires a strong thickness correction (the thickness changes by about 100 nm along the 130-nm rim profile, probably due to different sputtering yields of the Pt cover and the silicate).

Interestingly, the PLE spectra of the Eu3+ 0.12:(ZnO-nc SiO2) ZnO-nc SiO2samplerong and broad 614 nm emishows profile for excitation wavelengthstrongeen 325 and 370 nm, which then reduces till 450 nm.

Frank-Condon principle based assignments confirms the principleof 12 numbasedof vibrassignmentsnsitions confirmsby a single 532 + 2 nm pulse profile.

The largest registered depth is about 45 nm (see profile on Figure 3c)., as we showed above (Figure 2), a compressive strain is localized in the SL/cap interface (GaN cap layer is under compression), and the cracking could be provoked by the tensile deformation only.