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The nitrogen flow ratio, N2/(Ar + N2), during the sputtering process was set at 0.4.
The maximum H/E ratio occurs at a nitrogen flow ratio of 20%.
The processing parameters were various sputtering powers, substrate holder rotation speeds, and nitrogen flow ratio (N2/(N2 + Ar)).
The nitride films, regardless of the nitrogen flow ratio, were found to have only an FCC structure register on the XRD profiles.
The influences of nitrogen flow ratio on the chemical composition, microstructure and mechanical properties of the deposited nitride films have been investigated.
A Stoichiometric nitride ratio, i.e. (Al,Cr,Nb,Si,Ti,V 50 N50 is attained for a nitrogen flow ratio (RN) of 10% and higher.
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Cr W N coatings were prepared through reactive direct current magnetron cosputtering at nitrogen flow ratios of 0.1 0.5.
In this paper, quasi-amorphous Ta Si N thin films were fabricated by using reactive magnetron co-sputtering at different Si/Ta power ratios and nitrogen flow ratios (FN2% = FN2/ FAr + FN2) × 100%).
In this paper, we investigated the relationship between the microstructures, resistivity, nanohardness and thermal stability of the Ta Si N thin films at different nitrogen flow ratios of 0 30% (N2% = N2 / (Ar + N2) × 100%) by magnetron reactive co-sputtering.
The AlCrTaTiZr alloy film exhibited an amorphous structure, while a simple face-center-cubic solid-solution structure was observed in the nitride films prepared under different nitrogen flow ratios.
Cr N coatings were deposited in Ar/N2 plasma at various nitrogen flow rate ratios by using the reactive magnetron sputtering process.
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