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Phase-change memory (PCM) has emerged as one of the most promising memory technologies to feature in next generation memory systems.
A great amount of research attention has been focused on the next generation memory devices.
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The inherent memory property of memristor is distinctly observed in the nanoscale and therefore, it is considered as a strong candidate for the next generation memories [3].
Tiny phase-change wires could serve as a key element in next-generation memory.
For reading and writing data, MRAM can be as fast as a few nanoseconds, or billionths of a second, best among the three next-generation memory candidates.
Researchers are now one step closer to realizing the full potential of next-generation memory devices based on phase-changing material.
ReRAM (resistance random access memory) has been receiving attention as the next-generation memory owing to advantages such as fast switching-speed, low power consumption, and simple structure.
Phase change memory (PCM) that is operated on resistance changes caused by joule heating has been suggested as the next-generation memory for scaling since its programming current scales linearly.
It meets the demands for next-generation memory systems.
The next-generation memory market will cover up these emerging memory technologies [21].
He also worked on next-generation memory hardware before joining the faculty of the University of Pittsburgh in 2010.
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