Sentence examples for network dislocation from inspiring English sources
The finite element method is used to solve the resulting system of equations in (4), (7), and (16), with the displacement field u, the plastic distortion F P, and the bulk network dislocation density ρ n as unknowns.
The slip strength g α depends on the network dislocation density ρ n (X,t) via Taylor hardening: begin{array}{*{20}l} g^{alpha} = g_{0} + bmu_{0}sqrt{h_{n} rho_{n}}, end{array} (15).
The network dislocation density ρ n in (15) evolves according to the Kocks Mecking type evolution model (Mecking and Kocks 1981): begin{array}{*{20}l} dot rho_{n} = v left k_{1} sqrt{rho_{0} rho_{n}} - k_{2} rho_{n}right), end{array} (16).
The current healthcare boundary is not semipermeable; it is either too rigid (e.g., the existence of insurance represents a major barrier to entry) or too loose (e.g., a legislative mandate without fiscal support that instructs every emergency room to accept all patients, including the uninsured, causing great network dislocation).
We investigated the radiation-induced segregation (RIS) near grain boundaries in austenitic stainless steel under electron irradiation, taking into account the simultaneous evolution of faulted dislocation loops and network dislocations.
Previous work on aluminum and stainless steel show that the density of dislocations within the subgrain interior (or the network dislocations) are associated with the rate-controlling process for five-power-law creep-plasticity.
These deposited dislocations formed a network of dislocation lines.
Dislocation lines looped around the precipitate, and most dislocations were deposited on the surface of precipitate, forming a network of dislocation lines.
The variable (v = sum _{alpha } |v^{alpha }|) is the aggregate slip rate, ρ 0=1012 m −2 is the reference network bulk dislocation density, and the Kocks-Mecking parameters k 1, k 20, and v k0 are equal to 450, 14 and 1010 s −1 respectively.
Such structure undergoes sudden relaxation with a large network of dislocations forming at the epilayer growth interface [16].
In the layer/substrate interface a square network of dislocations accommodates the misfit between corresponding spacings in the two crystals.
