(a) Separated Si-NDs as single QD, (b) 2D array of Si-NDs as 2D QDSL, and (c) 3D array of Si-NDs as 3D QDSL.
For Nd-doped STO single crystals (Nd:STO), the ionic radius of Sr2+, Ti4+, and Nd3+ (Nd2+) is 0.118, 0.0605, and 0.0983 (0.129) nm, respectively, suggesting that Nd3+ could easily substitute Sr2+ rather than Ti4+ due to similar radius between Nd3+ and Sr2+ [21].
We prepared three types of Si-ND arrangements, as seen in Figure 2: separated Si-NDs as a single QD, a 2D array of Si-NDs as a 2D QDSL, and a 3D array of Si-NDs as a 3D QDSL.
Fig. 1 a The XRD patterns and b Raman spectra of undoped STO and Nd-doped STO single crystal.
The experimental setup used for collecting the phantom data was a pulsed ND: YAG laser based single transducer (1MHz) scanning system, which was described in detail elsewhere [ 8].
ND = not determined Single plasmids containing productively rearranged light and heavy chains were transfected into HEK293E cells and the supernatant was tested by ELISA to ensure that the recombinant antibodies retained specificity for their antigens.
Figure 3 I - V curves of single Si-ND, 2D, and 3D arrays of Si-NDs measured by c-AFM.
It is expected that a single IrOx-ND in the Al2O3/IrOx-NDs/Al2O3/WOx Al2O3/IrOx-NDs/Al2O3/WOxstackve switcanng controleristhes in futuresistive
Red, blue, and green lines plot calculated results for 3D array, 2D array, and single Si-ND with SiC matrix.
Red, blue, and green lines plot results for the 3D array, 2D array, and single Si-ND with SiC matrix.
It is expected that the scalability potential of this resistive switching memory device could be the diameter (approximately 1.3 nm) of a single IrOx-ND in future.
