Sentence examples for nanoscale thick from inspiring English sources

We demonstrate that high quality nanoscale thick J-aggregate films can be uniformly deposited over macroscopic substrates, engineered at the molecular level, and patterned into single or multi-dimensional photonic bandgap structures.

Small molecule OFETs could be fabricated with low onset voltage and sub-threshold slope, and high mobility and on/off ratio by modifying the wetting properties of the dielectric surface with a nanoscale thick layer of PαMS.

a p-MTJ spin valve with a nanoscale-thick bottom Co2Fe6B2 free layer.

b p-MTJ spin valve with a nanoscale-thick top Co2Fe6B2 free layer.

(Black) p-MTJ spin valve with a nanoscale-thick bottom Co2Fe6B2 free layer and (red) p-MTJ spin valve with a nanoscale-thick top Co2Fe6B2 free layer ex situ annealed at 350 and 400 °C.

a p-MTJ spin valve with a nanoscale-thick bottom Co2Fe6B2 free layer ex situ annealed at 350 °C, b p-MTJ spin valve with a nanoscale-thick top Co2Fe6B2 free layer ex situ annealed at 350 °C, c p-MTJ spin valve with a nanoscale-thick bottom Co2Fe6B2 free layer ex situ annealed at 400 °C, and d p-MTJ spin valve with a nanoscale-thick top Co2Fe6B2 free layer ex situ annealed at 400 °C.

In this work, we demonstrated nanoscale-thick organic thin films using the electrospray process as a solution process alternative.

Considering both the i-PMA magnetic moment of the Co2Fe6B2 pinned layer and the crystallinity of the MgO tunneling barrier leads to the TMR ratio for the p-MTJ spin valve with a nanoscale-thick bottom Co2Fe6B2 free layer (~160 %) being very slightly higher than that for the p-MTJ spin valve with a nanoscale-thick top Co2Fe6B2 free layer (~158 %).

Remember that the MgO tunneling barrier for the p-MTJ spin valve with a nanoscale-thick bottom Co2Fe6B2 free layer was flat while that for the p-MTJ spin valve with a nanoscale-thick top Co2Fe6B2 free layer was flexuous, as shown in Fig. 4a, b.

In addition, for a p-MTJ spin valve with a nanoscale-thick top free layer, the CoFeB free layer is located above the synthetic antiferromagnetic (SyAF) layer in a p-MTJ spin valve, while for a p-MTJ spin valve with a nanoscale-thick bottom free layer, the CoFeB free layer is located below the SyAF layer in a p-MTJ spin valve.

Thus, the i-PMA magnetic moment of the Co2Fe6B2 pinned layer ferro-coupled with the lower SyAF layer for the p-MTJ spin valve with a nanoscale-thick bottom Co2Fe6B2 free layer (550 μemu) was almost the same as that for the p-MTJ spin valve with a nanoscale-thick top Co2Fe6B2 free layer (550 μemu).