Further evidence for multiple operational recombination channels in the P3HT devices without the Nb2O5 interlayer comes from steady-state JV measurements where we monitor the open-circuit voltage (Voc) under different light intensities (see Figure 4 ).
In addition, multiple photon-induced charge trapping dynamics suggest a reduction in recombination channels after alneal and indicate a c-Si/Al2O3 conduction band offset of 2.02 ± 0.04 eV [43].
The latter is a source of non-radiative recombination channels.
Recombination can occur at multiple locations in the genome, and multiple recombination events can contribute to the formation of a single genome.
It was assessed that the competition between oxidation and recombination channels is stressed under such conditions.
The PHYLPRO graphical analysis showed multiple recombination signals with significant correlation values.
The defects cause nonradiative recombination channels, which degrade the QD photoluminescence (PL).
Experiments are performed at 10 K to overcome non-radiative recombination channels.
The effective lifetime represents the combined impact of all of these competing recombination channels.
Nonetheless, the accurate assignment of electron-hole recombination channels in CIS QDs remains ambiguous.
