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Using multiple ion guns, ToF-SIMS allows investigations in the bulk of the sample; in this case the results represent a 4-dimensional data cube with three spatial (X, Y, and Z) and one spectral (mass-to-charge) dimension.
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The particle beam treatment may range from the use of ion beams of a few keV from lab ion guns [10] to high-energy beams with hundreds of MeV available from ion beam particle accelerators [11, 12].
These are a gold cluster ion gun and a C60 ion gun.
The film surface was etched with an ion gun prior to measurements to remove surface contamination.
XPS ion depth profiling experiments were performed using a differentially pumped ion gun (IQE-12/38 model) working at 3 keV.
During layer deposition the substrate was irradiated with End-Hall ion gun.
The reactive ions extracted from the ion gun were SF+, SF2+, SF3+ and SF5+.
The coatings were deposited without (Vs = −70V) and with assistance of an ion gun (Vs = −40V).
The ion gun was operated at 25 kV with a current of 1 μA using Cs+ as the bombarding gas.
Sputtering is performed at normal incidence by a differentially pumped ion gun at a base pressure of 2 × 10-7 mbar.
Ion implantation set-up on the base of ion gun with target sputtering by Penning discharge plasma was created.
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