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A Ge/Si/air multilayer system is considered here.
Finally, the interaction of each mortar layer within the multilayer system is analyzed.
The results show that the TATAT multilayer system is a suitable structure for use as transparent conductive electrode in optoelectronic devices.
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This multilayer system was prepared by the combination of radio-frequency and direct-current magnetron sputtering.
The residual stress values for the multilayer system are significantly lower than that of (Ti,Si,Al N nanocomposite coatings.
This multilayer system was employed to attach anti-IgG molecules in a highly oriented manner and provide anti-IgG molecular functional configuration on the multilayer.
Heterogeneous reactions leading to the formation of intermetallic compounds in nanometric Ni Al multilayer system are examined both numerically and experimentally.
This multilayer system was used as a platform to investigate the effect of nanolayer coextrusion, biaxial stretching, and isothermal melt recrystallization on the confined morphologies of both of these polymers.
The bilayer period of the multilayer system was the function of the substrate rotation speed and the input power to the each evaporation source, and it was typically in the range of 10 20 nm.
The process of recovery in the multilayer system was found to occur at similar rates, or even slower, than in a three layer film in which polylactide reached its maximum extent of crystallinity.
According to this approach, the measured multilayer system was represented as three simple planar capacitors with uniform filling and connected in parallel.
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