Sentence examples for much lower resistivity from inspiring English sources
Peat usually overlies layers with much lower resistivity and water content like clay, silt or weathered bed rock.
Quasi-amorphous Ta Si N films had much lower resistivity, higher nanohardness and smooth morphology compared to the polycrystalline film.
Therefore, semimetallic QWs can have much lower resistivity and lower noise comparing with undoped semiconducting Hg1-xCdxTe QWs of the same thickness.
Thus, compared to the MoS2 film, the inversion layer at the MoS2/n-GaAs interface supplies a path with a much lower resistivity for carrier transport during the transverse measurements of the MoS2/n-GaAs heterojunction.
More importantly, much better electromagnetic interference (EMI) shielding ability is obtained for these CPCs with alternating multilayer conductive networks comparing with the same polymer blends with isotropic conductive networks, despite of the fact that much lower resistivity is obtained for the later.
Such a structural variation makes the electrical and optical properties of amorphous phase significantly different from the crystalline phase, as the phase-change materials in crystalline phase normally shows much lower electrical resistivity and higher optical reflectivity than those of amorphous phase.
This almost constant residual ESR is attributed mainly to the silicon electrical path: the nickel electrode has a much lower series resistance which accounts to less than 1 mΩ, while the silicon current path is narrower, as is mainly located near the surface of the silicon walls, and has higher resistivity (about 15 mΩ·m).
The graphite layers in the latter are preferentially oriented in the plane perpendicular to the compression direction; the in-plane electrical resistivity is much lower than the out-of-plane resistivity and the loss tangent, storage modulus and loss modulus are much higher for out-of-plane flexure than in-plane flexure.
This corresponds well with our results (Figs. 3 and 4), although the resolution of GREATEM is much lower than the electric resistivity method.
Since the resistivity of Ni-silicide is much lower than that of Si, according to the resistivity-mixture rule, the resistance of the nanowire can be reduced.
Finally, fs pump-probe spectroscopy and four-probe measurements reveal that the fs-PLD CIGS films have a much longer carrier lifetime and significantly lower resistivity, both are beneficial for photovoltaic applications.
