Sentence examples for much higher resistivity from inspiring English sources

AVA deposited Cu films having thickness less than 100 nm show much higher resistivity than dc-sputtered ones.

At a similar thickness or packing factor, specimens coated at angles different from 0° had a much higher resistivity than those coated at 0°.

The shallow geophysical induction log curves show much higher resistivity in the lower part of the Springfield Coal than the medium or deep curves because of invasion by freshwater drilling fluid, possibly indicating higher permeability.

Although somewhat resistive (between 100 and 300 Ωm), these bodies present a high contrast with the much higher-resistivity surroundings.

When the anodizing process reaches these impurities, especially the elements with much higher electric resistivity, the local Joule heat significantly increases too.

The Fe/SiO2 composite core displayed much higher electrical resistivity, lower core loss, better frequency stability of permeability and higher quality factor than that of the raw Fe core without insulated SiO2 layers.

The hardness, flexural strength and density of the final samples are comparable to the sintered SMCs, but they simultaneously exhibit much higher specific resistivity along with only slightly lower coercivity and permeability.

It caused these SMCs to exhibit much higher electrical resistivity, lower core loss, and better frequency stability of permeability than those of raw Fe-6.5wt%Si compacts and Fe-6.5wtFe-6.5wt%SMCs with the conventional chemical vapor deposition (CVD) process.

Broadband electrical characterization in the frequency range from 40 MHz to 40 GHz revealed that porous Si substrate provides much higher effective resistivity and lower dielectric constant than trap-rich HR-Si, actually comparable with quartz substrate values.

This however is not case with basement, as it has much more higher resistivity with corresponding low porousity and permeability as compared to the lateritic topsoil.

This result is much higher than the resistivity of SiNWs reported by Bauer et al., where they obtained a resistivity of 0.85 Ω cm for nanowires grown by molecular-beam epitaxy on an n+ silicon substrate [51].