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The different morphology was attributed to the different surfactants.
At an optimum concentration of fumed silica (2 wt%) the observed maximum conductivity and morphology was attributed to the presence of a strong network structure, while at a higher concentration the elastic behavior was more pronounced which impeded ion transport.
The rich morphology was attributed to the competition of nucleation rates and growth rates among different crystallographic planes which may be affected by changes in temperature regimes of the growing zone.
The larger particle size and nonaggregated particles morphology was attributed to the conjugation of herceptin on the surface of the QDs. Figure 4 shows the typical size and size distribution of the synthesized QDs) and QD-Her) measured by DLS.
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Formation of such a crystal morphology is attributed to three different growth controlling criteria.
The dendritic morphology is attributed to transport phenomena (diffusion, convection, migration) promoted by the cation discharge at the substrate-coating interface.
Their growth pattern and surface morphology is attributed to differing carbon extrusion speeds from the faces of the polycrystalline Ni catalyst particles that have been modified by H2S.
The origin of such a change in morphology is attributed to the difference of structure and interfacial tension at the interface between the matrix homo-PS and the PS block in SEBS triblock copolymer assembly.
These differences in ROS generation and cell morphology were attributed to PTT based on AuNPs, which was also investigated by infrared imaging in Fig. 5.
The difference in Co3O4 morphology is attributed to the difference in volatility between cobalt acetate and cobalt nitrate precursors, as described by the growth mechanism for Co3O4-decorated CuO NWs, which is schematically illustrated in Figure 4.
In the case of EBL masks (Figure 1b), this particular morphology is attributed to the redeposition of etched material around the holes during the plasma etch, whereas surface bumps around the holes in FIB masks are probably formed when bombarding the Ti with a high Ga dose.
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