The surface morphological and film growth characteristics of ZnO thin films laser deposited on to various substrates like glass, Silicon (Si), Gallium Arsenide (GaAs) and Indium Phosphide (InP) at various substrate temperatures like room temperature, 200 °C and 300 °C using ZnO pallets as targets are very novel, intelligent and significant from reported so for.
This along with the morphological characterization, film area and sheet resistance measurement allow identifying the critical roles of SWCNT orientation, packing density, and micro-crack formation in dictating the piezoresistivity of mechanically drawn SWCNT thin film strain sensors.
In our previous papers [14 16], the kinetic diagrams of morphological GeSiSn film state were constructed for various lattice parameter mismatches between GeSiSn and Si in the Sn content range from 0 to 8% using the reflection high-energy electron diffraction (RHEED).
Using the kinetic diagrams of GeSiSn film morphological state, a GeSiSn island array in the multilayer periodic structure was investigated.
These results were correlated to the film morphological properties and discussed in terms of interfacial state density modification.
This indicates that the beam-induced changes are purely morphological, with the film rearranging itself into nanoparticles in a self-organized process.
Optical, scanning probe and scanning transmission X-ray microscopy are used to demonstrate that the observed changes do not arise from morphological differences in film structure.
The dependence of these properties on the vapour incidence is explained with the nanodimensionality of the film morphological features.
To effectively distinguish the effect of TiO2 nanoparticle size and TiO2 thin film morphological feature on the properties of modified electrochromic device, TiO2 thin films were deposited onto FTO electrodes under different modification conditions, including lifting speed, precursor concentration, and dipping number, by fixing the TiO2 nanoparticle size to 5~10 nm.
