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Thus, it is likely that more electrons will tunnel in the device with overlap.
In N-TFET source doping has a significant effect on the ON-state current (ION) level; therefore more electrons will tunnel from source to channel region.
Therefore, more electrons will flow from n-type semiconductor to graphene, and simultaneously, more holes will flow from graphene to n-type semiconductor.
This implies that as the number density of electrons increases, more electrons will flow out of the dust grains, i.e., dust charge number decreases in order to maintain the quasineutrality.
It might seem surprising, given the very different assumptions underlying the quantum and ionic models, that bond valences can be used to validate density-functional-theory simulations, but ultimately all chemical models are based on the notion that the closer two atoms approach each other, the more electrons will be found in the bonding region.
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More and more hot electrons will take part in the emission, and thus, the emission will be enhanced.
With increasing dust density in a dust-plasma cloud, more and more plasma electrons will be collected by the dust.
Molecules that have one or more unpaired electrons will possess permanent magnetic moments.
The more pixels there are on a camera's sensor, the closer they are together and the more likely overheating electrons will corrupt the light sensors.
At the same time, more electrons and holes will make the carriers fill higher energy level states.
Researchers have known for decades that electrons will move more freely through semiconductors if the lattice of atoms that make up such crystalline materials can be stretched without breaking any bonds.
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