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Therefore, it is logical to speculate that the monotonous behavior of the hStemModule is the necessary outcome of the gradual loss of the stemness during the embryogenesis.
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We attribute this non-monotonous behavior to the competition of two effects.
Our results highlight a non-monotonous behavior for the composition- and size-dependent interaction of CO2 with Au-Pd cluster-functionalized ILs.
When considering local changes, we observe a non-monotonous behavior of the r ps, its intensity unusually modified far beyond to what it is expected for a monotonous change of the whole refractive index of the embedding medium.
As in Refs. [2, 15, 25], theoretical model predicts the non-monotonous behavior of the L(R) curves, reaching their maxima due to the balance of the GT and the diffusion-induced contributions into the overall growth rate.
Our results reveal a non-monotonous behavior of the catalytic activities of Co nanoclusters on size, which is of fundamental interest for the design of new Co catalysts for the conversion of CO2.
We report a non-monotonous behavior of the hardness of amorphous Cu Zr films as a function of composition, by applying a combinatorial deposition and nanoindentation method with unparalleled compositional resolution.
The Poisson's ratio of Zr-based bulk metallic glasses in the system Zr63−xCu24AlxNi10Co3 was found to exhibit a non-monotonous behavior as a function of x when measured with ultrasound by the pulse echo technique.
In addition, from wave propagation velocity measurements at different frequencies, i.e. f = 2.25 MHz and f = 10 MHz, a composition-dependent anelastic behavior as a function of x is found, exhibiting a similar non-monotonous behavior.
In simulations, this leads to a distinct non-monotonous behavior of w as a function of thickness, with w reaching values above that at the interface at some thicknesses.
We further note that, while Eq. 11 implies an unbounded growth of the EDL capacitance with VD in the PB model, Eq. 10 suggests a non-monotonous behavior that will eventually give rise to a saturation of the total gate capacitance at high applied voltages.
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