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Molecular doping, such as halide [19, 20] or polymer [21, 22], is a promising technique for pristine graphene films.
Additionally, some unwanted molecular doping such as water molecules may also be present on the surface of graphene [38, 39].
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Molecular doping approaches, such as using polyethyleneimine (PEI) molecules as n-dopants, have also been proven to improve FET characteristics [105, 106]: ~50-70 % improvement in ON current and FET mobility.
Wehling, T. O. et al. Molecular doping of graphene.
Yang, L. et al. Chloride molecular doping technique on 2D materials: WS2 and MoS2.
Nair, R. R. et al. Dual origin of defect magnetism in graphene and its reversible switching by molecular doping.
These approaches include the use of molecular doping, different contact materials [2-5], phase transformation of MoS2, and adding an interfacial oxide at the contacts [7, 8].
All of these results showed that ammonia molecules NH3 are not good candidates for effective molecular doping of graphene.
The data depicted in Fig. 5d demonstrate that reaction with NH4 is an effective way of molecular doping of graphene.
The inorganic compounds found in nature are the basis for new materials made by modifying molecular composition (such as purifying silicon and doping it with selected impurities) and structure (such as control of pore and grain size).
Thus, doping of such materials with π-electron networks might bring out novel physical properties, such as superconductivity.
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