The external electric field can effectively modulate band alignment and affect the optical properties of the C2N/β-Sb heterostructure.
Moreover, it provides a promising strategy for modulating the band positions of RGO. Figure 4 Mechanism of in-situ photoelectrochemical reduction of GO in a DSSC assembly.
Symmetry breaking induced by the in-plane strain not only modulates the band structure, but also changes the carrier population at the valence band maximum and conduction band minimum so that the transport current density can be regulated.
The tensile strain is proved to be an efficient way to modulate the band structure.
Introduction of very low nitrogen concentrations is sufficient to modulate the band gap of such systems over a wide range.
Our calculations reveal that it is possible to intentionally modulate the band structures of PbTe by appropriate collocation of dual-doping atoms for improved thermoelectric properties.
Fluorinated C60 (F-C60) is a p-type organic semiconductor with a deep highest occupied molecular orbital (HOMO) level and it was used to modulate the band structure of reduced graphene oxide (rGO).
Doping of graphene with other heteroatoms (e.g., nitrogen, boron, phosphorus, halogen, etc). is the most practicable, convenient, and efficient approach to modulate the band structure and properties of graphene [7] and further extend more useful applications in electronics and electrochemical cells [8, 9, 10, 11, 12, 13].
As described previously, pretreatment of cells with MG132 also modulated the band pattern of these nuclear fragments (Figure 2D).
Unexpectedly, we noticed that pretreatment of cells with 10 µM protease inhibitor MG132 modulated the band pattern of smaller species (Figure 2B, right panel).
