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and uncontrolled strain-induced modifications of the bandgap profile (the piezoelectric effect).
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The modification of the bandgap was attributed to the change in the molecular structure of PCBM by electron irradiation.
Figure 2 Modification of the BN bandgap.
Our results reveal the modification of the energy bandgap, carrier density, and drain current upon strain.
It is also of interest to estimate the magnitude of the bandgap modification due to electron-phonon interaction in isolated monolayers of BN.
The vibration modes at the bandgap edges are computed and analyzed to clarify the mechanism of the bandgap generation.
The 'bandgap' mark indicates the value of the bandgap for 4.8-nm HgTe QW.
The values are lower at the edges of the bandgap.
The direct bandgap correlates with some of the literature values, together with the covariation of the bandgap with the amplitudes of the αhν.
It is important to note that there are several ambiguities regarding the bandgaps and the nature of the bandgap of copper oxide compounds for both experimental and calculated values found in the literature.
There are some inconsistencies in the measured and calculated bandgaps for these oxides; mainly there are ambiguities about the exact value of the bandgap for pure CuO and to what extent it is a direct or indirect transition.
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