Sentence examples for modification of thickness from inspiring English sources

Despite of well-known advantages of high molecular weight polyethylene (Medpor, Synpore) in orbital reconstructions, the thickness of those implants significantly exceeds 0.5 mm and precise modification of thickness is limited.

The matrix-particle interphase was further investigated using quantitative nanomechanical mapping (QNM) to study the role of interfacial modification on thickness of interphase and development of a broader modulus gradient across the interface.

Careful modification of the thickness of the deposited coating and growth conditions may eventually achieve growth solely from the sacrificial layer without affecting the high-quality transparent thin film.

Note that similar variation in skin color could also be due to modification of the thickness or density of the yellow pigment layer without any change in the structural component.

Furthermore, the physical mechanisms were discussed and the re-sputtering process of light-atom layers is accounted for the modification of layer thicknesses which leads to the effective growth rates.

As the coated tablet was placed in the dissolution medium, the hydrophilic polymeric layer starts to swell, which then underwent progressive modification in terms of thickness and consistency.

The advantage of this approach is that it provides easy control over adsorption uniformity and capacity of CNTs in a metal matrix, through the combination of surface modification and thickness adjustment of the metal flake powders.

Modification of outer coating thickness and process temperature showed no improvement in release characteristics.

The modification of the barrier thickness of the tunnel barrier exhibits DT and FNT for suppressed current and sufficient current at VLow and VHigh, respectively.

First, it is well known that the tunnel barrier can exhibit non-linear I-V characteristics owing to the electric-field-controlled modification of the barrier thickness of the tunnel barrier [12, 13].

For conventional designs of single-layer Si3N4 or SiO2 passivation, the variation of lateral near-field confinement and the horizontal far-field (FF) divergence can be determined via the modification of dielectric layer thickness.