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In this paper, we focus on the alternative approach dealing with ultrasound-assisted modification of silicon.
It is considered that the irradiation induced structural modification of silicon samples is mainly attributed to the nuclear energy loss.
Gallant, B. M., Gu, X. W., Chen, D. Z., Greer, J. R. & Lewis, N. S. Tailoring of interfacial mechanical shear strength by surface chemical modification of silicon microwires embedded in Nafion membranes.
Comparison studies about structural modification of silicon materials with different structures under identical irradiation conditions can reveal the irradiation mechanisms for amorphous and crystalline phases of silicon.
Modification of silicon carbide (SiC) by targeted doping, for instance, produces a suitable material for the production of heating conductors and thermoelectric generators.
The action of the compression plasma flow on the sample results in the melting and subsequent modification of silicon material down to the depth of 6 μm.
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After surface modification on silicon wafer, efficient suppression of reflection in a broad visible spectral range can be achieved through multiple reflection and absorption.
Enhanced light absorption was obtained in works on n-type crystal silicon irradiated by high-energy Xe ion [11], which provided a promising method for the modification of amorphous silicon thin film.
Hydrogen peroxide induced chemical formation of polypyrrole molecularly imprinted by theophylline was applied for the modification of conducting silicon substrate covered by B NCD:O film.
This modification of the silicon surface by grafting of organic molecules was carried out by electrochemical reduction of 4-nitrobenzene diazonium tetrafluoroborate in an aqueous medium containing HF and H2SO4.
Synthesis, separation, and purification of high-aspect-ratio AuNRs; the modification of the silicon surface; DVD templates and the fabrication of PDMS stamps; and additional SEM images of AuNRs both randomly distributed and highly aligned on large-area substrates.
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