Sentence examples for modes of amorphous from inspiring English sources
The fourth style sample (B) (Figure 2B), showed two weak and broad bands around 1338 and 1589 cm−1 that could be assigned to C-C stretching modes of amorphous carbon [41],[41].
On the other hand, Fourier-transformed infrared spectroscopy (FTIR) done on similar NLP specimens revealed peaks characteristic of the vibration modes of amorphous carbonate such as bending seen at 875 cm−1 as well as a split in the asymmetric stretching band seen at 1430 cm−1 (Fig. 4A D; compare with signals obtained for CaCO3 as shown in Fig. 4G; see also references 40 and 41).
As the fluence increases, the bond angle deviation and the ratio of TA to TO mode of amorphous network of a-Si and nc-Si films initially increase and then decrease by a diminishing degree, while the bond angle deviation and the ratio of TA to TO mode of amorphous network of c-Si samples increase continuously.
Generally, the relative intensity of the vibtational mode of amorphous SiO2 (frequencies at ~1050 and ~400 cm−1, respectively) is too weak to be detected.
The broad peak at 931 cm-1 is due to the stretching mode of amorphous Si-Si (vibration that is also observed at 512 cm-1).
The former is assigned to the phonon mode of amorphous Sb80Te20 layer, while the latter is assigned to the A1g optical phonon mode of crystalline Sb and is not related to the periodic number.
It is noted that only one broad band centered at 480 cm-1 exists in the as-deposited sample, which is attributed to the transverse optical (TO) mode of amorphous Si-Si bonds.
For the as-deposited sample, only a weak and broad Raman band centered at 480 can1 can be detected, which is attributed to the transverse-optical (TO) vibration mode of amorphous Si Si bands.
It was already shown by Raman scattering that the peak at 3.90 THz arises from characteristic phonon mode of amorphous Sb80Te20 films[9], while the new peak at 4.58 THz may be assigned to A1g mode of crystalline Sb[14, 15], implying that the excess Sb in the Sb80Te20 layer is crystallized during laser irradiation above 70 mW.
Raman results reveal the presence of these oxide phases as well as the presence of D and G modes characteristic of amorphous carbon materials.
where I TO,c-Si and I TO,a-Si are the integrated TO phonon modes of crystalline and amorphous silicon, respectively.
