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The 3-level HHMM system[19] models the electronic device usage of a user as shown in Figure3.
Using both explicit solvent models and implicit (continuum) solvent models, the electronic characteristics of a dodecamer duplex DNA have been fully studied using both divide and conquer (D&C), semi-empirical quantum mechanics and non-D&C semi-empirical quantum mechanics.
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This review discusses modifications and extensions of Molecular Mechanics which are designed to model the electronic effects of the valence d and s electrons in transition metal compounds.
The solution of the Schrödinger wave equation for an electron and a hole is used to model the electronic properties of semiconductor.
In this paper, using Kronig Penney model, the electronic states in graphene-based superlattices with various substrates and considering exact electron Fermi velocity values are investigated.
Our interest is to model the electronic transport in Quantum Well Infrared Photodetectors (QWIPs).
Since the effects are quite localised, relatively small systems can be used to model the electronic structure.
A good agreement among the numerical results of the mechanical model, the electronic design simulation of the circuit and the real oscilloscope outputs of hardware implementation is confirmed.
In order to provide common idioms and patterns to the system *designers, we formally model the electronic power system architecture by using the PVS formal language.
According to the quantum confinement model, the electronic band gap of the nanocrystals increases when its diameters decrease, and the sharp rise in the absorption spectrum arises from a growing number of cubic SiC nanocrystals with band gaps lower than 5 eV.
Furthermore, strain-free heterostructures based on such alloys are designed and, using the effective-mass Hamiltonian model, the electronic structure of GeSiSn quantum wells with arbitrary composition is investigated, in order to understand their properties and the potential of their use in devices.
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