Sentence examples for model of silicon from inspiring English sources
In this paper, an attempt has been made to find the correlation between various parameters of the two-diode equivalent circuit model of silicon solar cells.
Note that the smaller etching depth of silicon compared with the produced oxide thickness can be explained with the conventional model of silicon volume expansion during the oxidation process.
Additionally, the systematic study of the effects of the etching time and the concentration of FeCl3 on the pyramid-like structures by the atom configuration model of silicon crystal faces demonstrated that the etching proceeds preferentially along the <1 0 0> directions of silicon.
This paper presents FDTD modeling of Silicon based photovoltaic cells like Silicon nanowires to supplement these challenges and find effective solutions in the design and performance of PV cells.
A new automatic parameter extraction method for modeling of silicon spiral inductors is presented.
Three common sp-based orthogonal tight-binding models of silicon (Goodwin Skinner Pettifor (GSP), Kwon et al., and Sawada) have been compared for their suitability for use in atomic-scale semiconductor simulation.
In the analysis of the hydroxylated surface and the SAMs formed on it, a four-phase model consisting of silicon substrate/SiO2/overlayer/air is assumed.
To answer this question, the nanoscale adhesion forces of eight L. monocytogenes strains that vary in their pathogenicity levels to a model surface of silicon nitride were quantified using atomic force microscopy.
The ellipsometric angles, Ψ and Δ, were fitted using a multilayer model composed of silicon, silicon oxide, and the multilayer film to obtain the thickness of the films.
This paper proposes equivalent circuit models of silicon-on-insulator (SOI) insulated-gate pn-junction devices for circuit simulations.
Interestingly, a recent primitive earth model of the silicon cycle in the precambrian era suggests that in some areas seawater temperature could be as high as ∼70°C [37] due to Earth temperature instability.
