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We analytically derive the pile-up magnitude, adopting a simple model for optical cross sections.
Here, we apply the simple model for optical cross sections in Eqs.
A new analytical model for optical and bias dependent nonlinear capacitances of GaAs MESFET which is valid for both linear and saturation regions has been proposed in this paper.
We provide formulae of enhancement factors for the number density and the optical depth due to a pile-up of dust particles caused by sublimation and its location and sublimation temperature, applying a simple model for optical cross sections of fractal dust particles.
To do this, we will now describe a random-effects group analysis model for optical imaging.
Aside from robustness, the model for optical flow presented here allows us to speed up the optimization by an order of magnitude.
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Taking profit from the complexity of the network it is possible to design photochromic systems, exhibiting a thermal back reaction, or models for optical memories, when the back reaction is prevented.
A model for the optical readout principle has been developed using Fourier optics.
This is because the MGT is a reduced model for the optical properties of magnetic fluid.
A theoretical model for the optical behavior has also been proposed.
(2) A spatial model for atmospheric optical depth that uses detailed DEM and MODTRAN simulations.
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Justyna Jupowicz-Kozak
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